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2N3055 数据表(PDF) 1 Page - STMicroelectronics |
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2N3055 数据表(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. INTERNAL SCHEMATIC DIAGRAM August 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-Base Voltage (IE = 0) 100 V VCER Collector-Emitter Voltage (RBE ≤ 100Ω) 70 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 15 A IB Base Current 7 A Ptot Total Dissipation at Tc ≤ 25 oC 115 W Tstg Storage Temperature -65 to 200 o C Tj Max. Operating Junction Temperature 200 o C For PNP types voltage and current values are negative. 1 2 TO-3 ® 1/4 |
类似零件编号 - 2N3055 |
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类似说明 - 2N3055 |
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