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TC74VHCT86AFN 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TC74VHCT86AFN 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TC74VHCT86AF/AFN/AFT 2007-10-01 3 Operating Ranges (Note 1) Characteristics Symbol Rating Unit Supply voltage VCC 4.5 to 5.5 V Input voltage VIN 0 to 5.5 V 0 to 5.5 (Note 2) Output voltage VOUT 0 to VCC (Note 3) V Operating temperature Topr −40 to 85 °C Input rise and fall time dt/dV 0 to 20 ns/V Note 1: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 2: VCC = 0 V Note 3: High or low state Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High-level input voltage VIH ― 4.5 to 5.5 2.0 ― ― 2.0 ― V Low-level input voltage VIL ― 4.5 to 5.5 ― ― 0.8 ― 0.8 V IOH = −50 μA 4.5 4.40 4.50 ― 4.40 ― High-level output voltage VOH VIN = VIH or VIL IOH = −8 mA 4.5 3.94 ― ― 3.80 ― V IOL = 50 μA 4.5 ― 0.0 0.1 ― 0.1 Low-level output voltage VOL VIN = VIH or VIL IOL = 8 mA 4.5 ― ― 0.36 ― 0.44 V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA ICC VIN = VCC or GND 5.5 ― ― 2.0 ― 20.0 μA Quiescent supply current ICCT Per input: VIN = 3.4 V Other input: VCC or GND 5.5 ― ― 1.35 ― 1.50 mA Output leakage current IOPD VOUT = 5.5 V 0 ― ― 0.5 ― 5.0 μA AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ― 4.8 6.8 1.0 8.0 Propagation delay time tpLH tpHL ― 5.0 ± 0.5 50 ― 6.3 8.8 1.0 10.0 ns Input capacitance CIN ― ― 4 10 ― 10 pF Power dissipation capacitance CPD (Note) ― 18 ― ― ― pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate) |
类似零件编号 - TC74VHCT86AFN |
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类似说明 - TC74VHCT86AFN |
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