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TA7808AF 数据表(PDF) 6 Page - Toshiba Semiconductor

部件名 TA7808AF
功能描述  1 A Three-Terminal Positive Voltage Regulator
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TA7808AF 数据表(HTML) 6 Page - Toshiba Semiconductor

Back Button TA7808AF Datasheet HTML 2Page - Toshiba Semiconductor TA7808AF Datasheet HTML 3Page - Toshiba Semiconductor TA7808AF Datasheet HTML 4Page - Toshiba Semiconductor TA7808AF Datasheet HTML 5Page - Toshiba Semiconductor TA7808AF Datasheet HTML 6Page - Toshiba Semiconductor TA7808AF Datasheet HTML 7Page - Toshiba Semiconductor TA7808AF Datasheet HTML 8Page - Toshiba Semiconductor TA7808AF Datasheet HTML 9Page - Toshiba Semiconductor TA7808AF Datasheet HTML 10Page - Toshiba Semiconductor  
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TA78033, 04, 05, 07, 08, 09AF
2006-11-06
6
Electrical Characteristics for All Products
Generally, the characteristics of power supply ICs vary with temperature.
The ratings at Tj = 25℃assume that a temperature increase has no effect on IC characteristics as ascertained by
pulse tests.
Standard Application Circuit
• Place
CIN as close as possible to the input terminal and GND. Place COUT as close as possible to the output
terminal and GND. Although capacitor
COUT acts to smooth the dc output voltage during suspension of
output oscillation or load change, it might cause output oscillation in a cold environment due to increased
capacitor ESR. It is therefore recommended to use a capacitor with small variations temperature sensitivity.
The IC may oscillate due to external conditions (output current, temperature, or the type of the capacitor
used). The type of capacitor required must be determined by the actual application circuit in which the IC is
used.
The notice in case of application
• If the input terminal shorts to GND in a state of normal operation, the output terminal voltage becomes
higher than the input voltage (GND potential), and the electric charge of a chemical capacitor connected to
the output terminal flows into the input side, which may cause the destruction of circuit.
In these cases, take such steps as a zener diode and a general silicon diode are connected to the circuit, as
shown in the above figure
• There is a possibility that internal parasitic devices may be generated when momentary transients cause a
terminal’s potential to fall below that of the GND terminal. In such case, that the device could be destroyed.
The voltage of each terminal and any state must therefore never fall below the GND potential.
1
2
VIN
TA78xxxAF
3
VOUT
COUT
CIN
0.33
μF
0.1
μF
IN
OUT
GND


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