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IRL3716LPBF 数据表(PDF) 1 Page - International Rectifier |
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IRL3716LPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 12 page Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 A IDM Pulsed Drain Current 720 PD @TC = 25°C Maximum Power Dissipation 210 W PD @TC = 100°C Maximum Power Dissipation 100 W Linear Derating Factor 1.4 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C www.irf.com 1 6/22/04 IRL3716PbF IRL3716SPbF IRL3716LPbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 20V Notes through are on page 11 Absolute Maximum Ratings D2Pak IRL3716S TO-220AB IRL3716 TO-262 IRL3716L Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.72 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB mount) ––– 40 Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Active Oring PD - 95448 4.0m Ω 180A l Lead-Free |
类似零件编号 - IRL3716LPBF |
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类似说明 - IRL3716LPBF |
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