TA4014FE

2007-11-01

1

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4014FE

TA4014FE Use for Crystal Oscillators

Features

• Bias resistors, a transistor for oscillation and a transistor for

buffer are packed in one package; hence, TA4014FE can easily

compose a crystal oscillator.

• TA4014FE comes with a 6-pin thin ultra-compact package

(1.6 mm × 1.6 mm) and is suitable for super-high density

mounting.

Characteristics

Symbol

Rating

Unit

Power supply voltage

6

V

Circuit current

8

mA

Total power dissipation

(Note 1)

100

mW

(Note 1)

Junction temperature

125

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: When mounted on the glass epoxy board of 2.5 cm2

× 1.6 t.

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Circuit current

⎯

1.08

1.27

1.52

mA

Oscillator base voltage

⎯

1.34

1.51

1.67

V

Oscillator emitter voltage

⎯

0.69

0.79

0.88

V

Buffer base voltage

⎯

2.05

2.29

2.53

V

Fout voltage

⎯

2.03

2.26

2.52

V

Characteristics

Symbol

Typ.

Unit

R1 resistance

5.6

k

Ω

R2 resistance

6.9

k

Ω

R3 resistance

15

k

Ω

R4 resistance

640

Ω

R5 resistance

670

Ω

Weight: 0.003 g (typ.)