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TC74HCT08AFN 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TC74HCT08AFN 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TC74HCT08AP/AF/AFN 2007-10-01 2 IEC Logic Symbol Truth Table A B Y L L L L H L H L L H H H Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5~7 V DC input voltage VIN −0.5~VCC + 0.5 V DC output voltage VOUT −0.5~VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg −65~150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 4.5~5.5 V Input voltage VIN 0~VCC V Output voltage VOUT 0~VCC V Operating temperature Topr −40~85 °C Input rise and fall time tr, tf 0~500 ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. |
类似零件编号 - TC74HCT08AFN |
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类似说明 - TC74HCT08AFN |
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