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2SA1242 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SA1242 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1242 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Base-emitter voltage VBE (V) VBE – IC Collector-emitter voltage VCE (V) Safe Operating Area −10 −0.01 Common emitter IC/IB = 40 Tc = 100°C −0.05 −0.03 −0.1 −0.3 −1 −0.1 −0.3 −0.5 −1 −3 −25 25 −3 −10 −0.03 Common emitter VCE = −2 V 10 −0.01 30 50 100 300 1000 −0.03 −0.1 −0.3 −1 Tc = 100°C −25 25 −3 500 Common emitter Tc = 25°C 0 0 −8 −2 IB = −10 mA −4 −6 −2 −4 −6 −8 −10 −50 −70 −150 −120 −30 0 −20 −100 Common emitter VCE = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −8 −6 −4 −2 Tc = 100°C −25 25 Ambient temperature Ta (°C) PC – Ta 12 0 0 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 2 4 6 8 10 (1) (2) (3) * : Single nonrepetitive pulse Tc = 25°C ** : Pulse width = 10 ms (max) Duty cycle = 30% (max) Curves must be derated linearly with increase in temperature. −0.1 −0.3 IC max (continuous) IC max (pulsed)** DC operation Tc = 25°C VCEO max −10 −30 −1 −3 −0.3 −0.5 −1 −3 −5 10 ms* −10 100 ms* 1 ms* |
类似零件编号 - 2SA1242_07 |
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类似说明 - 2SA1242_07 |
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