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GT15Q102 数据表(PDF) 2 Page - Toshiba Semiconductor |
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GT15Q102 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page GT15Q102 2006-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage VGE (OFF) IC = 1.5 mA, VCE = 5 V 4.0 ⎯ 7.0 V Collector-emitter saturation voltage VCE (sat) IC = 15 A, VGE = 15 V ⎯ 2.1 2.7 V Input capacitance Cies VCE = 50 V, VGE = 0, f = 1 MHz ⎯ 850 ⎯ pF Rise time tr ⎯ 0.05 ⎯ Turn-on time ton ⎯ 0.12 ⎯ Fall time tf ⎯ 0.16 0.32 Switching time Turn-off time toff Inductive Load VCC = 600 V, IC = 15 A VGG = ±15 V, RG = 56 Ω (Note1) ⎯ 0.56 ⎯ μs Thermal resistance Rth (j-c) ⎯ ⎯ ⎯ 0.74 °C/W Note1: Switching time measurement circuit and input/output waveforms Note2: Switching loss measurement waveforms GT15Q301 RG IC VCE L VCC −VGE 10% 90% VGE VCE IC td (off) toff td (on) tr ton 0 0 tf 10% 10% 10% 90% 10% 90% 10% 90% VGE VCE IC Eoff Eon 0 0 10% |
类似零件编号 - GT15Q102_06 |
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类似说明 - GT15Q102_06 |
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