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1SV305 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 1SV305
功能描述  VCO for VHF Band Radio
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

1SV305 数据表(HTML) 1 Page - Toshiba Semiconductor

  1SV305 Datasheet HTML 1Page - Toshiba Semiconductor 1SV305 Datasheet HTML 2Page - Toshiba Semiconductor 1SV305 Datasheet HTML 3Page - Toshiba Semiconductor  
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1SV305
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV305
VCO for VHF Band Radio
• Small package
• High capacitance ratio: C1 V/C4 V = 3.0 (typ.)
• Low series resistance: rs = 0.27 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
Capacitance
C1 V
VR = 1 V, f = 1 MHz
17.3
18.3
19.3
pF
Capacitance
C4 V
VR = 4 V, f = 1 MHz
5.3
6.1
6.6
pF
Capacitance ratio
C1 V/C4 V
2.8
3
Series resistance
rs
VR = 1 V, f = 470 MHz
0.27
0.32
Ω
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)


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