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DF5A6.8LFU 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 DF5A6.8LFU
功能描述  Product for Use Only as Protection against Electrostatic Discharge (ESD)
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

DF5A6.8LFU 数据表(HTML) 1 Page - Toshiba Semiconductor

  DF5A6.8LFU_07 Datasheet HTML 1Page - Toshiba Semiconductor DF5A6.8LFU_07 Datasheet HTML 2Page - Toshiba Semiconductor DF5A6.8LFU_07 Datasheet HTML 3Page - Toshiba Semiconductor  
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DF5A6.8LFU
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8LFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
• The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• Low Terminal capacitance (between Cathode and Anode)
: CT = 6.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 ~ 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5 mA
6.5
6.8
7.1
V
Dynamic impedance
ZZ
IZ = 5 mA
50
Ω
Knee dynamic impedance
ZZK
IZ = 0.5 mA
100
Ω
Reverse current
IR
VR = 5 V
0.5
μA
Terminal capacitance
(between Cathode and Anode)
CT
VR = 0 V, f = 1 MHz
6.0
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 8kV
Criterion: No damage to device elements
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2V1B
Weight: 0.0062 g (typ.)


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