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TC7WG08FU 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TC7WG08FU 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TC7WG08FU/FK 2007-11-01 4 AC Characteristics (Input: tr = tf = 3 ns) Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 26.9 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 10.9 20.7 1.0 38.6 1.4~1.6 ⎯ 5.9 9.6 1.0 11.3 1.65~ 1.95 ⎯ 4.5 7.0 1.0 7.5 2.3~2.7 ⎯ 2.9 4.4 1.0 4.9 CL = 10 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.2 3.5 1.0 4.1 0.9 ⎯ 30.0 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 12.0 24.2 1.0 42.0 1.4~1.6 ⎯ 6.5 10.5 1.0 12.6 1.65~ 1.95 ⎯ 5.0 7.7 1.0 8.0 2.3~2.7 ⎯ 3.2 4.9 1.0 5.6 CL = 15 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.5 3.8 1.0 4.4 0.9 ⎯ 45.0 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 18.0 33.4 1.0 63.2 1.4~1.6 ⎯ 8.9 14.8 1.0 17.9 1.65~ 1.95 ⎯ 6.9 10.3 1.0 10.8 2.3~2.7 ⎯ 4.4 6.4 1.0 6.8 Propagation delay time tpLH tpHL CL = 30 pF, RL = 1 MΩ 3.0~3.6 ⎯ 3.5 4.9 1.0 5.4 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note13) 0.9 ~ 3.6 ⎯ 10 ⎯ ⎯ ⎯ pF Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr.) = CPD・VCC・fIN + ICC/2 |
类似零件编号 - TC7WG08FU |
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类似说明 - TC7WG08FU |
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