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MT6L55E 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 MT6L55E
功能描述  VHF-UHF Band Low Noise Amplifier Application
Download  3 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

MT6L55E 数据表(HTML) 2 Page - Toshiba Semiconductor

  MT6L55E Datasheet HTML 1Page - Toshiba Semiconductor MT6L55E Datasheet HTML 2Page - Toshiba Semiconductor MT6L55E Datasheet HTML 3Page - Toshiba Semiconductor  
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MT6L55E
2007-11-01
2
Electrical Characteristics Q1-Side (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
70
140
Transition frequency
fT
VCE = 3 V, IC = 10 mA
10
12
GHz
⎪S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
6.5
Insertion gain
⎪S21e
2 (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
4
7
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.6
3
Noise figure
NF (2)
VCE = 3 V, IC = 5 mA, f = 2 GHz
1.5
3
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note 2)
0.45
0.85
pF
Electrical Characteristics Q2-Side (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
140
Transition frequency
fT
VCE = 1 V, IC = 5 mA
2
4.5
GHz
⎪S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
7.5
Insertion gain
⎪S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
7.5
10.5
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.4
2.2
dB
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz
(Note 2)
0.95
1.15
pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.


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