2SK3320

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3320

For Low Noise Audio Amplifier Applications

• Two devices in a ultra super mini (five pins) package

• Super low noise: NF = 1.0dB (typ.)

(Q1, Q2 common)

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

−50

V

Gate current

10

mA

Drain power dissipation

(Note 1)

200

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2L1B

Weight: 6.2 mg (typ.)