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1SV228 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 1SV228
功能描述  Electronic Tuning Applications of FM Receivers
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

1SV228 数据表(HTML) 1 Page - Toshiba Semiconductor

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1SV228
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV228
Electronic Tuning Applications of FM Receivers
• Low rs: rs = 0.3 Ω (typ.)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
15
V
Reverse current
IR
VR = 15 V
10
nA
Capacitance
C3 V
VR = 3 V, f = 1 MHz
(Note 1)
28.5
30.5
32.5
pF
Capacitance
C8 V
VR = 8 V, f = 1 MHz
(Note 1)
11.7
12.7
13.7
pF
Capacitance ratio
C3 V/C8 V
(Note 1)
2.1
2.6
Series resistance
rs
VR = 3 V, f = 100 MHz
(Note 1)
0.3
0.5
Ω
Note 1: Characteristics between anode 1 and anode 2
Marking
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)


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