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2SK2604_06 Datasheet(数据表) 2 Page - Toshiba Semiconductor

部件型号  2SK2604
说明  Silicon N Channel MOS Type Switching Regulator Applications
下载  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK2604 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SK2604
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate−source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 640 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A,
1.9
2.2
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 3 A
1.0
3.8
S
Input capacitance
Ciss
1080
Reverse transfer capacitance
Crss
16
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
105
pF
Rise time
tr
40
Turn−on time
ton
80
Fall time
tf
40
Switching time
Turn−off time
toff
140
ns
Total gate charge (gate−source
plus gate−drain)
Qg
34
Gate−source charge
Qgs
16
Gate−drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
18
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−1.9
V
Reverse recovery time
trr
1000
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs
7.5
μC
Marking
K2604
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)




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