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2SK2602_06 Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  2SK2602
说明  Silicon N Channel MOS Type Switching Regulator Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK2602 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK2602
2006-11-08
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2602
Switching Regulator Applications
Low drain−source ON resistance
: RDS (ON) = 0.9 Ω (typ.)
High forward transfer admittance
: |Yfs| = 5.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
DC
(Note 1)
ID
6
A
Drain current
Pulse (Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
345
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)




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