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2SJ464 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SJ464 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SJ464 2006-11-16 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) ⎪Yfs⎪ – ID Drain current ID (A) RDS (ON) – ID 0 0 −8 −20 −5 −4 −12 −16 Common source VDS = −10 V Pulse test −1 −3 −4 −2 100 Tc = −55°C 25 −10 0 0 −8 −20 −2.0 −4 −12 −16 Common source Tc = 25°C Pulse test −0.4 −1.2 −1.6 VGS = −2 V −4 −0.8 −2.5 −3.5 −3 −4 −4.5 −8 −6 Tc = −55°C 100 25 1 −1 −10 −3 −100 30 10 3 5 50 100 −5 −30 −50 Common source VDS = −10 V Pulse test 0 0 −20 −50 −20 −8 −10 −30 −40 Common source Tc = 25°C Pulse test −4 −12 −16 −3 −4 VGS = −2.5 V −3.5 −10 −8 −6 −5 −4.5 0.01 −1 −100 −10 −3 −50 0.1 0.3 −30 VGS = −4 −10 V 0.05 Common source Tc = 25°C Pulse test 0.03 −5 0 0 ID = −18 A −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −2 −4 −6 −8 −10 −16 −12 −14 −9 −4.5 Common source Tc = 25°C Pulse test |
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