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2SJ105 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SJ105
功能描述  For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SJ105 数据表(HTML) 1 Page - Toshiba Semiconductor

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2SJ105
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
• Complimentary to 2SK330
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
−10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = −10 V, VGS = 0
−1.2
−14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = −10 V, ID = −0.1 μA
0.3
6.0
V
Forward transfer admittance
⎪Yfs
VDS = −10 V, VGS = 0, f = 1 kHz
1.0
4.0
mS
Drain-source ON resistance
RDS (ON)
VDS = −10 mV, VGS = 0
IDSS = −5 mA
270
Ω
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
18
pF
Reverse transfer capacitance
Crss
VDG = −10 V, ID = 0, f = 1 MHz
3.6
pF
Note: IDSS classification Y: −1.2~−3.0 mA, GR: −2.6~−6.5 mA, BL: −6~−14 mA
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)


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