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2SC1815 Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  2SC1815
说明  Silicon NPN Epitaxial Type (PCT process)
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC1815 Datasheet(HTML) 1 Page - Toshiba Semiconductor

  2SC1815 数据表 HTML 1Page - Toshiba Semiconductor 2SC1815 数据表 HTML 2Page - Toshiba Semiconductor 2SC1815 数据表 HTML 3Page - Toshiba Semiconductor 2SC1815 数据表 HTML 4Page - Toshiba Semiconductor  
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2SC1815
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
• High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
• Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
70
700
DC current gain
hFE (2)
VCE = 6 V, IC = 150 mA
25
100
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 10 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Base intrinsic resistance
rbb’
VCE = 10 V, IE = −1 mA
f
= 30 MHz
50
Ω
Noise figure
NF
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 10 kΩ
1.0
10
dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)




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