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2SC4207 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SC4207
功能描述  Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC4207 数据表(HTML) 1 Page - Toshiba Semiconductor

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2SC4207
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type)
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• High hFE: hFE = 120~700
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1618
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
(Note 1)
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)


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