2SC3125

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC3125

TV Final Picture IF Amplifier Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

25

V

Emitter-base voltage

4

V

Collector current

50

mA

Base current

25

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

Collector-emitter breakdown voltage

25

⎯

⎯

V

DC current gain

20

70

200

Collector-emitter

⎯

⎯

0.2

Saturation voltage

Base-emitter

⎯

⎯

1.5

V

Collector output capacitance

⎯

1.1

1.6

pF

Collector-base time constant

⎯

⎯

25

ps

Transition frequency

250

600

⎯

MHz

Marking

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)