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2SC2859 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 2SC2859
功能描述  Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC2859 数据表(HTML) 1 Page - Toshiba Semiconductor

  2SC2859_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2859_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2859_07 Datasheet HTML 3Page - Toshiba Semiconductor  
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2SC2859
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFE linearity: hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
• Complementary to 2SA1182.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
VCE = 1 V, IC = 100 mA
70
400
DC current gain
(Note)
hFE (2)
VCE = 6 V, IC = 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
0.8
1.0
V
Transition frequency
fT
VCE = 6 V, IC = 20 mA
300
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
7
pF
Note: hFE (1) classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
hFE (2) classification O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)


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