TPCP8301 datasheet(1/7 Pages) TOSHIBA

部件名	TPCP8301

功能描述	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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TPCP8301

2006-11-17

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS

Ⅳ)

TPCP8301

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Lead (Pb)-free

• Small footprint due to small and thin package

• Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 14 S (typ.)

• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)

• Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

−20

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−20

V

Gate-source voltage

VGSS

±12

V

DC

(Note 1)

ID

−5

Drain current

Pulse

(Note 1)

IDP

−20

A

Single-device operation

(Note 3a)

PD (1)

1.48

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

PD (2)

1.23

Single-device operation

(Note 3a)

PD (1)

0.58

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

PD (2)

0.36

W

Single-pulse avalanche energy

(Note 4)

EAS

6.5

mJ

Avalanche current

IAR

−5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.12

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: For Notes 1 to 6, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Circuit Configuration

Marking (Note 6)

Unit: mm

1. Source1

5. Drain2

2. Gate1

6. Drain2

3. Source2

7. Drain1

4. Gate2

8. Drain1

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-3V1G

Weight: 0.017 g (typ.)

0.33±0.05

0.28+0.1

-0.11

1.12+0.13

-0.12

0.475

0.65

A

0.05 M

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

0.05 M

A

S

0.025

S

1.12+0.13

-0.12

0.28+0.1

-0.11

8301

1

2

3

4

8

7

6

5

※

Lot No.

1

2

3

4

8

7

6

5

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TPCP8301 数据表(PDF) 1 Page - Toshiba Semiconductor

TPCP8301 数据表(HTML) 1 Page - Toshiba Semiconductor

类似零件编号 - TPCP8301

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TPCP8301 数据表(PDF) 1 Page - Toshiba Semiconductor

TPCP8301 数据表(HTML) 1 Page - Toshiba Semiconductor

类似零件编号 - TPCP8301

类似说明 - TPCP8301

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