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IRFP23N50LPBF 数据表(PDF) 1 Page - International Rectifier |
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IRFP23N50LPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page IRFP23N50LPbF 02/11/04 SMPS MOSFET HEXFET® Power MOSFET TO-247AC Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity . Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS(on) typ. Trr typ. ID 500V 0.190 Ω 170ns 23A Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A IDM Pulsed Drain Current 92 PD @TC = 25°C Power Dissipation 370 W Linear Derating Factor 2.9 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt e 14 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 23 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 92 integral reverse (Body Diode) Ã p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V f trr Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 23A ––– 220 330 TJ = 125°C, di/dt = 100A/µs f Qrr Reverse Recovery Charge ––– 560 840 nC TJ = 25°C, IS = 23A, VGS = 0V f ––– 980 1500 TJ = 125°C, di/dt = 100A/µs f IRRM Reverse Recovery Current ––– 7.6 11 A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 10lb xin (1.1Nxm) www.irf.com 1 PD - 94999 |
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