TPCF8104

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)

TPCF8104

Notebook PC Applications

Portable Equipment Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−30

V

−30

V

Gate-source voltage

±20

V

DC

(Note 1)

−6

Drain current

Pulse

(Note 1)

−24

A

Drain power dissipation

(t = 5 s)

(Note 2a)

2.5

W

Drain power dissipation

(t = 5 s)

(Note 2b)

0.7

W

Single pulse avalanche energy (Note 3)

5.8

mJ

Avalanche current

−3

A

Repetitive avalanche energy

(Note 4)

0.25

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1A

Weight: 0.011 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4