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IRF7313QPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF7313QPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 7 page HEXFET® Power MOSFET 09/04/07 VDSS = 30V RDS(on) = 0.029Ω IRF7313QPbF Symbol Maximum Units Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25°C 6.5 TA = 70°C 5.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction) IS 2.5 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 82 mJ Avalanche Current IAR 4.0 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 5.8 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Continuous Drain Current Maximum Power Dissipation A ID PD V W D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 SO-8 l Advanced Process Technology l Ultra Low On-Resistance l Dual N- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. www.irf.com 1 PD - 96125 |
类似零件编号 - IRF7313QPBF |
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类似说明 - IRF7313QPBF |
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