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IRF6726MPBF Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF6726MPBF
说明  DirectFET Power MOSFET
下载  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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www.irf.com
1
08/14/07
IRF6726MPbF
IRF6726MTRPbF
DirectFET
™ Power MOSFET ‚
Description
The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A.
Notes:
DirectFET
™ ISOMETRIC
MT
PD - 96121
l RoHS Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
ID = 32A
TJ = 25°C
TJ = 125°C
0
102030405060
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VDS= 24V
VDS= 15V
ID= 25A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
25
180
250
±20
30
32
260
25
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3m
Ω@10V 1.9mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
51nC
16nC
5.4nC
45nC
28nC
1.7V




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