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IRF6629PBF Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF6629PBF
说明  DirectFET Power MOSFET
下载  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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www.irf.com
1
07/11/06
IRF6629PbF
IRF6629TRPbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 4.4mH, RG = 25Ω, IAS = 23A.
Notes:
PD - 97235
Description
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
SQ
SX
ST
MQ
MX
MT
MP
0
10203040
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 23A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
23
Max.
23
180
230
±20
25
29
1170
l RoHs Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
7
8
ID = 29A
TJ = 25°C
TJ = 125°C
DirectFET
™ ISOMETRIC
MX
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.6m
Ω@ 10V 2.1mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
34nC
11nC
4.2nC
27nC
23nC
1.8V




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