数据搜索系统,热门电子元器件搜索 |
|
BTA201W-800E 数据表(PDF) 7 Page - NXP Semiconductors |
|
BTA201W-800E 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BTA201W_SER_E_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 17 September 2007 7 of 13 NXP Semiconductors BTA201W series E 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit BTA201W-600E and BTA201W-800E dVD/dt rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 600 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) =4A; gate open circuit dVcom/dt =20V/µs 2.5 - - A/ms dVcom/dt =10V/µs 3.5 - - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs -2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 050 001aab101 0.8 1.2 1.6 0.4 VGT VGT(25°C) IGT IGT(25°C) Tj (°C) −50 0 150 100 50 1 2 3 0 003aaa959 (1) (2) (3) (1) (2) (3) |
类似零件编号 - BTA201W-800E |
|
类似说明 - BTA201W-800E |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |