BF908 datasheet(4/9 Pages) NXP

部件名	BF908

功能描述	Dual-gate MOS-FETs

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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4 / 9 page

NXP Semiconductors

Product speciﬁcation

Dual-gate MOS-FETs

BF908; BF908R

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board.

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID = 15 mA; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

BF908

500

K/W

BF908R

550

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S =10mA

8

−

20

V

±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10mA

8

−

20

V

−V(P)G1-S

gate 1-source cut-off voltage

VG2-S =4V; VDS =8V; ID =20 µA −−

2V

−V(P)G2-S

gate 2-source cut-off voltage

VG1-S =4V; VDS =8V; ID =20 µA −−

1.5

V

IDSS

drain-source current

VG2-S =4V; VDS =8V; VG1-S = 0

3

1527mA

±IG1-SS

gate 1 cut-off current

VG2-S =VDS = 0; VG1-S =5V

−−

50

nA

±IG2-SS

gate 2 cut-off current

VG1-S =VDS = 0; VG2-S =5V

−−

50

nA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

y

fs

forward transfer admittance

pulsed; Tj =25 °C; f = 1 MHz

36

43

50

mS

Cig1-s

input capacitance at gate 1

f = 1 MHz

2.4

3.1

4

pF

Cig2-s

input capacitance at gate 2

f = 1 MHz

1.2

1.8

2.5

pF

Cos

output capacitance

f = 1 MHz

1.2

1.7

2.2

pF

Crs

reverse transfer capacitance

f = 1 MHz

20

30

45

fF

F

noise ﬁgure

f = 200 MHz; GS = 2 mS; BS =BSopt

−

0.6

1.2

dB

f = 800 MHz; GS =GSopt; BS =BSopt

−

1.5

2.5

dB

Rev. 03 - 14 November 2007

4 of 9

类似零件编号 - BF908

制造商	部件名	数据表	功能描述
NXP Semiconductors	BF908	87Kb / 8P	Dual-gate MOS-FETs 1996 Jul 30
NXP Semiconductors	BF908	9Mb / 130P	RF Manual 16th edition June 2012
Quanzhou Jinmei Electro...	BF908-R	264Kb / 9P	Dual-gate MOS-FETs
Quanzhou Jinmei Electro...	BF908-R_2015	264Kb / 9P	Dual-gate MOS-FETs
NXP Semiconductors	BF908R	87Kb / 8P	Dual-gate MOS-FETs 1996 Jul 30

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类似说明 - BF908

制造商	部件名	数据表	功能描述
NXP Semiconductors	BF908	87Kb / 8P	Dual-gate MOS-FETs 1996 Jul 30
NXP Semiconductors	BF1100	159Kb / 14P	Dual-gate MOS-FETs 1995 Apr 25
Quanzhou Jinmei Electro...	BF908-R	264Kb / 9P	Dual-gate MOS-FETs
	BF1100	115Kb / 14P	Dual-gate MOS-FETs
	BF1100_2015	115Kb / 14P	Dual-gate MOS-FETs
NXP Semiconductors	BF1100	311Kb / 15P	Dual-gate MOS-FETs Rev. 02-13 November 2007
Quanzhou Jinmei Electro...	BF908-R_2015	264Kb / 9P	Dual-gate MOS-FETs
NXP Semiconductors	BF1102	133Kb / 16P	Dual N-channel dual gate MOS-FETs 2000 Apr 11
Quanzhou Jinmei Electro...	BF1105_2015	125Kb / 16P	N-channel dual-gate MOS-FETs
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