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STP6NK90Z 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP6NK90Z
功能描述  N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP6NK90Z 数据表(HTML) 2 Page - STMicroelectronics

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤5.8A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
STP6NK90Z / STB6NK90Z
STP6NK90ZFP
VDS
Drain-source Voltage (VGS =0)
900
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
900
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
5.8
5.8 (*)
A
ID
Drain Current (continuous) at TC = 100°C
3.65
3.65 (*)
A
IDM ( )
Drain Current (pulsed)
23.2
23.2 (*)
A
PTOT
Total Dissipation at TC = 25°C
140
30
W
Derating Factor
1.12
0.24
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Viso
Insulation Withstand Voltage (DC)
--
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
D2PAK
TO-220FP
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.89
4.2
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max (When
mounted on minimum Footprint)
60
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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