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2SD2088 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SD2088 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD2088 2003-02-04 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 4 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V DC current gain hFE VCE = 2 V, IC = 1 A 2000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF Unclamped inductive load energy ES/B L = 10 mH, IC = 1.3 A, IB = ±50 mA 8.4 ― ― mJ Turn-on time ton ― 0.4 ― Storage time tstg ― 4.0 ― Switching time Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 0.6 ― µs Marking Explanation of Lot No. 20 µs VCC = 30 V Output IB2 IB1 Input D2088 Product No. Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) |
类似零件编号 - 2SD2088 |
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类似说明 - 2SD2088 |
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