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IRF7811AVPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF7811AVPBF
功能描述  N-Channel Application-Specific MOSFETs
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7811AVPBF 数据表(HTML) 1 Page - International Rectifier

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1
IRF7811AVPbF
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% R
G Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Q
sw & RDS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques.
Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS
…
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
IRF7811AVPbF
SO-8
08/17/04
PD-95265
IRF7811AV
RDS(on)
11 m
QG
17 nC
QSW
6.7 nC
QOSS
8.1 nC
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
Continuous Output Current
TA = 25°C
A
(VGS ≥ 4.5V)
TL = 90°C
IDM
TA = 25°C
TL = 90°C
TJ , TSTG
°C
IS
ISM
Thermal Resistance
Symbol
Typ
Max
Units
RθJA
–––
50
RθJL
–––
20
W
A
°C/W
Maximum Junction-to-Ambient
eh
Maximum Junction-to-Lead
Pulsed Source Current
™
2.5
50
2.5
-55 to 150
ID
PD
Power Dissipation
eÃÃÃÃÃÃÃÃÃÃ
Continuous Source Current (Body Diode)
Parameter
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
™
Junction & Storage Temperature Range
3.0
IRF7811AV
10.8
100
30
±20
11.8


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