NE32984D-SL datasheet(2/4 Pages) NEC

部件名	NE32984D-SL

功能描述	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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制造商	NEC [NEC]

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NE32984D

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

NOISE PARAMETERS

VDS = 2 V, ID = 10 mA

SYMBOLS

PARAMETERS

UNITS

RATINGS

VDS

Drain to Source Voltage

V

4.0

VGS

Gate to Source Voltage

V

-3.0

IDS

Drain Current

mA

IDSS

IGRF

Gate Current

µA

100

TCH

Channel Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

PT

Total Power Dissipation

mW

165

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Ambient Temperature, TA (

°C)

Note:

1. Operation in excess of any one of these parameters may result in

permanent damage.

FREQ.

NFMIN.

GA

Γopt

(GHz)

(dB)

MAG

ANG

Rn/50

2.0

0.29

20.0

0.85

20

0.30

4.0

0.30

18.3

0.75

41

0.28

6.0

0.31

16.5

0.68

63

0.20

8.0

0.34

15.0

0.61

86

0.13

10.0

0.37

13.6

0.56

111

0.09

12.0

0.40

12.5

0.52

137

0.05

14.0

0.49

12.0

0.47

164

0.04

16.0

0.63

11.8

0.40

-168

0.04

18.0

0.81

11.5

0.31

-139

0.07

200

150

100

50

0

50

100

150

200

MAXIMUM STABLE GAIN AND FORWARD

INSERTION GAIN vs. FREQUENCY

Drain Current, ID (mA)

Frequency, f (GHz)

NOISE FIGURE AND ASSOCIATED GAIN vs.

DRAIN CURRENT

VGS = 0 V

-0.2 V

-0.4 V

-0.8 V

-0.6 V

100

80

60

40

20

0

1.5

3.0

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Drain to Source Voltage, VDS (V)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

VDS = 2 V

f = 12 GHZ

1.5

1.0

0.5

2.0

010

20

30

NF

GA

14

13

12

11

10

VDS = 2 V

ID = 10 mA

MSG

IS21SI

20

24

16

12

8

4

12

4

6

8 10

14

20

30

2

类似零件编号 - NE32984D-SL

制造商	部件名	数据表	功能描述
Renesas Technology Corp	NE32984D-SL	207Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1995

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类似说明 - NE32984D-SL

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California Eastern Labs	NE24283B	49Kb / 4P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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NEC	NE32484A	55Kb / 5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE32584C	57Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE32584	58Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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