SILICON PLANAR SWITCHING DIODE

BAL99

SOT-23

MARKING- TF

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

VR

70

V

Peak Forward Current

IF

100

mA

Total Device Dissipation FR-5 Board*

PD

225

mW

Ta=25 deg C

Derate Above=25 deg C

1.80

mW/deg C

Thermal Resistance Junction to Ambient

Rth(j-a)

556

deg C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate,** Ta=25 deg C

Derate Above=25 deg C

2.40

mW/deg C

Thermal Resistance Junction to Ambient

Rth(j-a)

417

deg C/W

Junction & Storage Temperature

Tj, Tstg

-55 to +150

deg C

*FR-5=1.0 x 0.75 x 0.062 in.

** Alumina= 0.4 x 0.3 x 0.024 in 99.5% alumina

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise noted)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Reverse Voltage Leakage Current

IR

VR=70V

-

-

2.50

uA

VR=25V, Tj=150 deg C

-

-

30

uA

VR=70V, Tj=150 deg C

-

-

50

uA

Reverse Breakdown Voltage

V(BR)

IR=100uA

70

-

-

V

Forward Voltage

VF

IF=1.0mA

-

-

715

mV

IF=10mA

-

-

855

mV

IF=50mA

-

-

1000

mV

IF=150mA

-

-

1250

mV

Recovery Current

QS

IF=10mA, VR=5V,

-

-

45

pC

RL=500 ohms

Diode Capacitance

CD

VR=0V, f=1MHz

-

-

1.5

pF

Reverse Recovery Time

trr

IF=IR=10mA,RL=

-

-

6.0

ns

100 ohms measured @

IR=1.0 mA

Forward Recovery Voltage

VFR

IF=10mA, tr=20ns

-

-

1.75

V

3

Pin Configuration

1 = NC

2 = ANODE

3 = CATHODE

1

2

Transys

Electronics

LI M ITE D