IRF7807D2PbF

2

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Schottky Diode & Body Diode Ratings and Characteristics

Parameter

Min

Typ

Max

Units

Conditions

Diode Forward Voltage

V

SD

0.54

V

T

0.43

T

Reverse Recovery Time

trr

36

ns

T

Reverse Recovery Charge

Qrr

41

nC

di/dt = 100A/µs

Forward Turn-On Time

t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

„

50% Duty Cycle, Rectangular

*

Devices are 100% tested to these parameters.

Electrical Characteristics

Parameter

Min

Typ

Max

Units

Conditions

Drain-to-Source

V

(BR)DSS

30

V

V

Breakdown Voltage*

Static Drain-Source

R

17

25

m

Ω

V

‚

on Resistance*

Gate Threshold Voltage* V

1.0

V

V

Drain-Source Leakage

I

DSS

90

µAV

Current*

7.2

mA

V

T

Gate-Source Leakage

I

GSS

+/- 100

nA

V

Current*

Total Gate Charge

Q

gsync

10.5

14

V

Synch FET*

V

Total Gate Charge

Q

gcont

12

17

V

Control FET*

V

Pre-Vth

Q

gs1

2.1

V

Gate-Source Charge

Post-Vth

Q

gs2

0.76

nC

Gate-Source Charge

Gate to Drain Charge

Q

gd

2.9

Switch Charge*

Q

SW

3.66

5.2

(Q

Output Charge*

Q

oss

17.6

21.6

V

Gate Resistance

R

g

1.2

Ω