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74AUC1G04 数据表(PDF) 2 Page - NXP Semiconductors |
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74AUC1G04 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 12 page 2002 Nov 12 2 Philips Semiconductors Preliminary specification Inverter 74AUC1G04 FEATURES • Wide supply voltage range from 0.8 to 2.7 V • Performance optimised for VCC = 1.8 V • High noise immunity • Complies with JEDEC standard: – JESD76 (1.65 to 1.95 V) • 8 mA output drive (VCC = 1.65 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • ESD protection: 2000 V Human Body Model (A 114-A) 200 V Machine Model (A 115-A) • 3.3 V tolerant inputs/outputs • SC-88A and SC-74A package. DESCRIPTION The 74AUC1G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device. Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging current backflow through the device when it is powered down. The 74AUC1G04 provides the inverting buffer. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; input slewrate ≥ 1 V/ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPHL/tPLH propagation delay input A to output Y VCC = 0.8 V; CL = 15 pF; RL =2kΩ 4.4 ns VCC = 1.2 V; CL = 15 pF; RL =2kΩ 1.8 ns VCC = 1.5 V; CL = 15 pF; RL =2kΩ 1.3 ns VCC = 1.8 V; CL = 30 pF; RL =1 kΩ 1.4 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 1.2 ns CI input capacitance 4 pF CPD power dissipation capacitance per buffer VCC = 1.8 V; notes 1 and 2 14 pF |
类似零件编号 - 74AUC1G04 |
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类似说明 - 74AUC1G04 |
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