SN74TVC3010

10-BIT VOLTAGE CLAMP

SCDS088G – APRIL 1999 – REVISED AUGUST 2003

7

POST OFFICE BOX 655303

APPLICATION INFORMATION

electrical characteristics

The electrical characteristics of the NMOS transistors used in the TVC devices are illustrated by TI SPICE

simulations. Figure 4 shows the test configuration for the TI SPICE simulations. The results, shown in

Figures 5 and 6, show the current through a pass transistor versus the voltage at the source for different

reference voltages. The plots of the dc characteristics clearly reveal that the device clamps at the desired

reference voltage for the varying device environments.

Figure 5 shows the V-I characteristics, with low reference voltages and a reference-transistor drain-supply

VDPASS

VREF

RDREF

GATE

VBIAS

VDDREF

RDPASS

VDDPASS

VSPASS

Figure 4. TI SPICE Simulation Schematic and Voltage-Node Names