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BAT93 数据表(PDF) 2 Page - NXP Semiconductors |
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BAT93 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification Schottky barrier diode BAT93 December 1993 2 FEATURES • Ultra-fast switching speed • Low forward voltage • Two-pin SMD package. DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection.Iintended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VR continuous reverse voltage 30 V IF continuous forward current 200 mA VF forward voltage IF = 10 mA 400 mV IR reverse current VR = 25 V 2 µA Tj junction temperature 150 °C Cd diode capacitance VR = 1 V 10 pF ka MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol. |
类似零件编号 - BAT93 |
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类似说明 - BAT93 |
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