TC6320

Features

Low threshold

Low on resistance

Low input capacitance

Fast switching speeds

Freedom from secondary breakdown

Low input and output leakage

Independent, electrically isolated N- and P-

channels

Applications

Medical ultrasound transmitters

High voltage pulsers

Amplifiers

Buffers

Piezoelectric transducer drivers

General purpose line drivers

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N- and P- Channel Enhancement-Mode Dual MOSFET

General Description

The Supertex TC6320 consists of high voltage low

threshold N-channel and P-channel MOSFETs in an SO-

8 package. Both MOSFETs have integrated gate-source

resistors and gate-source zener diode clamps which are

desired for high voltage pulser applications. The TC6320 is

a complimentary, high-speed, high voltage, gate-clamped

N- and P-channel MOSFET pair in an SO-8 package.

These low threshold enhancement-mode (normally-off)

transistors utilize an advanced vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces devices with the

power handling capabilities of bipolar transistors and

with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, these devices are free from thermal

runaway and thermally induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Ordering Information

Device

Package Options

8-Lead SOIC (Narrow Body)

TC6320

TC6320TG

TC6320TG-G

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Parameter

Value

Drain to source voltage

BV

DSS

Drain to gate voltage

BV

DGS

Operating and storage temperature

-55°C to +150°C

+300°C

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Note 1. Distance of 1.6mm from case for 10 seconds.

Pin Configuration

BV

R

N-Channel

P-Channel

N-Channel

P-Channel

200V

-200V

7.0Ω

8.0Ω

S1

G1

S2

G2

D2

D2

D1

D1

SO-8 Package

(top view)

1

2

36

7

8

N-Channel

P-Channel

45