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PZT2222A 数据表(PDF) 1 Page - Diotec Semiconductor |
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PZT2222A 数据表(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage NPN Version 2006-05-09 Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Power dissipation Verlustleistung 1.3 W Plastic case Kunststoffgehäuse SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PZT2222 PZT2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO 30 V 40 V Collector-Base-volt. - Kollektor-Basis-Spannung B open VCBO 60 V 75 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5 V 6 V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-cutoff current – Kollektor-Reststrom IE = 0, VCB = 50 V PZT2222 PZT2222A ICBO ICBO – – – – 20 nA 10 nA IE = 0, VCB = 50 V, Tj = 150°C PZT2222 PZT2222A ICBO ICBO – – – – 20 µA 10 µA Emitter-cutoff current – Emitter-Reststrom IC = 0, VEB = 3 V IEBO – –- 10 nA Collector saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VCEsat VCEsat – – – – 0.4 V 0.3 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VCEsat VCEsat – – – – 1.6 V 1.0 V 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.65 2.3 3.25 0.7 6.5±0.2 3±0.1 1 2 3 4 Type Code |
类似零件编号 - PZT2222A |
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类似说明 - PZT2222A |
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