BC847PN datasheet(1/2 Pages) DIOTEC

部件名	BC847PN

功能描述	Complementary Surface Mount General Purpose Si-Planar Transistors

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制造商	DIOTEC [Diotec Semiconductor]

网页	http://www.diotec.com

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BC847PN

NPN

PNP

Complementary Surface Mount General Purpose Si-Planar Transistors

Komplementäre Si-Planar Transistoren für die Oberflächenmontage

NPN

PNP

Version 2006-09-05

Dimensions - Maße [mm]

6 = C1

5 = B2

4 = E2

1 = E1

2 = B1

3 = C2

Power dissipation

Verlustleistung

300 mW

Plastic case

Kunststoffgehäuse

SOT-363

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25°C)

Grenzwerte (TA = 25°C)

per transistor – pro Transistor

BC847PN

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

B open

VCBO

45 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCEO

50 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEB0

6 V

Power dissipation – Verlustleistung

Ptot

300 mW 1)

Collector current – Kollektorstrom (dc)

IC

100 mA

Peak Collector current – Kollektor-Spitzenstrom

ICM

200 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 5 V, IC = 2 mA

T1 - NPN

hFE

200

–

450

- VCE = 5 V, - IC = 2 mA

T2 - PNP

hFE

220

–

475

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

T1 - NPN

VCEsat

–

250 mV

600 mV

- IC = 10 mA, - IB = 0.5 mA

- IC = 100 mA, - IB = 5 mA

T2 - PNP

- VCEsat

–

300 mV

650 mV

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

2.4

2 x 0.65

5

6

4

0.9±0.1

2±0.1

Type

Code

3

2

1

类似零件编号 - BC847PN

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BC847PN	229Kb / 6P	NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Diodes Incorporated	BC847PN	458Kb / 6P	COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR
Diodes Incorporated	BC847PN	46Kb / 3P	COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30278 Rev. 2 - 2
Diotec Semiconductor	BC847PN	186Kb / 2P	SMD General Purpose NPN/PNP Transistors
Infineon Technologies A...	BC847PN	59Kb / 6P	NPN/PNP Silicon AF Transistor Array Jul-02-2001

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类似说明 - BC847PN

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BC847PN 数据表(PDF) 1 Page - Diotec Semiconductor

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类似零件编号 - BC847PN

类似说明 - BC847PN

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类似零件编号 - BC847PN

类似说明 - BC847PN

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