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FM25L16 数据表(PDF) 1 Page - Ramtron International Corporation

部件名 FM25L16
功能描述  16Kb FRAM Serial 3V Memory
Download  14 Pages
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制造商  RAMTRON [Ramtron International Corporation]
网页  http://www.ramtron.com
标志 RAMTRON - Ramtron International Corporation

FM25L16 数据表(HTML) 1 Page - Ramtron International Corporation

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 3.0
Aug. 2006
Page 1 of 14
FM25L16
16Kb FRAM Serial 3V Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
Unlimited Read/Write Cycles
45 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 18 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
1
µA Standby Current
Industry Standard Configuration
Industrial Temperature -40
°C to +85°C
“Green”/RoHS 8-pin SOIC Package
“Green”/RoHS 8-pin TDFN Package
TDFN Footprint Conforms to TSSOP-8
Description
The FM25L16 is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L16 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. The product offers
virtually
unlimited
write
endurance,
orders
of
magnitude more endurance than EEPROM. FRAM
also exhibits much lower power during writes than
EEPROM.
These capabilities make the FM25L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16 provides substantial benefits to users
of
serial
EEPROM
as
a
hardware
drop-in
replacement. The FM25L16 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage
VSS
Ground
Ordering Information
FM25L16-G
“Green”/RoHS 8-pin SOIC
FM25L16-DG
“Green”/RoHS 8-pin TDFN
/CS
SO
/WP
VSS
VDD
/HOLD
SCK
SI
Top View
1
2
3
4
8
7
6
5
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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