KSD-T0O016-001

3

STK0765BF

Electrical Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

650

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

10

μA

Gate leakage current

-

-

±100

nA

Drain-source on-resistance

④

-

1.2

1.6

Ω

Forward transfer conductance

④

-

8.1

-

S

Input capacitance

Ciss

-

974

1460

Output capacitance

Coss

-

105

236

Reverse transfer capacitance

Crss

-

13

20

pF

Turn-on delay time

-

18

-

Rise time

-

19

-

Turn-off delay time

-

72

-

Fall time

-

28

-

ns

Total gate charge

-

32

48

Gate-source charge

-

6.5

9.8

Gate-drain charge

-

11

17

nC

Source-Drain Diode Ratings and Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Units

Continuous source current

-

-

7

Pulsed-source current

①

Integral reverse diode

in the MOSFET

-

-

28

A

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

648

-

ns

Reverse recovery charge

-

4.8

-

uC

Note ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=10mH, I

③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④ Essentially independent of operating temperature