SI6467DQ datasheet(3/4 Pages) VISHAY

部件名	SI6467DQ

功能描述	P-Channel 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 4 page

Si6467DQ

Vishay Siliconix

Document Number: 70829

S-59526—Rev. A, 19 Oct-98

www.vishay.com

2-3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

0.00

0.01

0.02

0.03

0.04

0.05

0

6

12

18

24

30

0

6

12

18

24

30

0

246

8

10

12

0.0

0.9

1.8

2.7

3.6

4.5

0

10203040

50

0.6

0.8

1.0

1.2

1.4

- 50

- 25

0

25

50

75

100

125

150

0

2000

4000

6000

8000

10000

0

246

8

10

12

VGS = 5 thru 2 V

25

_C

TC = 125_C

Crss

Coss

Ciss

VDS = 6 V

ID = 8.0 A

VGS = 4.5 V

ID = 8.0 A

VGS = 4.5 V

VGS = 2.5 V

1 V

-55

_C

1.5 V

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

VGS = 1.8 V

ID = 5.8 A

类似零件编号 - SI6467DQ

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	SI6467DQ	98Kb / 5P	P-Channel 1.8V Specified PowerTrench MOSFET

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