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5SGA25H2501 数据表(PDF) 1 Page - ABB |
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5SGA25H2501 数据表(HTML) 1 Page - ABB |
1 / 9 page ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V ITGQM = 2500 A ITSM = 16 kA VT0 = 1.66 V rT = 0.57 m Ω VDClin = 1400 V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500 V VGR ≥ 2V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 30 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 FIT failure rate 1400 V -40 ≤ T j ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) min. 17 kN Fm Mounting force max. 24 kN A Acceleration: Device unclamped Device clamped 50 200 m/s 2 m/s 2 M Weight 0.8 kg DS Surface creepage distance ≥ 22 mm Da Air strike distance ≥ 13 mm |
类似零件编号 - 5SGA25H2501 |
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类似说明 - 5SGA25H2501 |
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