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TSA5523M 数据表(PDF) 10 Page - NXP Semiconductors |
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TSA5523M 数据表(HTML) 10 Page - NXP Semiconductors |
10 / 20 page 1996 Dec 17 10 Philips Semiconductors Product specification 1.4 GHz I2C-bus controlled multimedia synthesizer TSA5523M HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling bipolar devices. Every pin withstands the ESD test in accordance with “MIL-STD-883C category B” (2000 V). Every pin withstands the EDS test in accordance with Philips Semiconductors Machine Model 0 Ω, 200 pF (200 V). THERMAL CHARACTERISTICS CHARACTERISTICS VCC1 = 4.5 to 5.5 V; Tamb = −20 to +85 °C; see note 1; unless otherwise specified. SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 120 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT General VCC1 supply voltage 4.5 − 5.5 V ICC1 supply current VCC1 =5V − 22 30 mA VPORth power-on reset threshold voltage Tamb =25 °C slope is −6 mV/°C 1.5 2.0 − V Tamb operating ambient temperature −20 − +85 °C fiRF RF input frequency 64 − 1400 MHz N divider ratio 15-bit frequency word 256 − 32767 − XTAL oscillator fXTAL frequency range RXTAL =25to200 Ω 3.2 4.0 4.48 MHz ZXTAL input impedance f = 4 MHz 600 1200 −Ω DLXTAL(p-p) drive level on pin XTAL (peak-to-peak value) series capacitor = 18 pF; crystal Philips 4333 1430 4881 − 110 − mV Prescaler VRFin input level VCC1 = 4.5 to 5.5 V; Tamb = −20 to +85 °C; see Fig.4 f = 80 to 150 MHz −25 − +3 dBm f = 150 to 1000 MHz −28 − +3 dBm f = 1000 to 1400 MHz −26 − +3 dBm ZiRF input impedance see Fig.5 −−− |
类似零件编号 - TSA5523M |
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类似说明 - TSA5523M |
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