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DDS-EJS-S2T-1 数据表(PDF) 3 Page - DOMINANT Semiconductors |
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DDS-EJS-S2T-1 数据表(HTML) 3 Page - DOMINANT Semiconductors |
3 / 12 page 15/11/2005 V2.0 3 AlInGaP : DDx-EJS DOMINANT TM Semiconductors Innovating Illumination Typ. (V) Vf @ If = 20mA Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Electrical Characteristics at Ta=25˚C Max. (V) Vr @ Ir = 10uA Min. (V) Part Number DDx-EJ 1.8 2.0 12 Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1) Reverse voltage ESD Thereshold (HBM) LED juction temperature Operating temperature Storage temperature Power dissipation (at room temperature) 30 1000 12 2 125 -40 … +100 -40 … +100 78 mA mA V kV ˚C ˚C ˚C mW Min. (V) 2.6 Vf Bining (Optional) Forward Voltage (V) Vf @ If = 20mA 01 02 03 04 1.55 ... 1.85 1.85 ... 2.15 2.15 ... 2.45 2.45 ... 2.65 Forward voltage, Vf is measured with an accuracy of ± 0.1V. Please consult sales and marketing for special part number to incorporate Vf binning. |
类似零件编号 - DDS-EJS-S2T-1 |
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类似说明 - DDS-EJS-S2T-1 |
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