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TEA6324 数据表(PDF) 9 Page - NXP Semiconductors |
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TEA6324 数据表(HTML) 9 Page - NXP Semiconductors |
9 / 36 page 1997 Mar 13 9 Philips Semiconductors Preliminary specification Sound control circuit TEA6324T Voffset DC step offset between any adjoining step Gv =0to −66 dB − 0.2 10 mV Gv =20to0dB − 215 mV DC step offset between any step to mute Gv =0to −66 dB −− 10 mV Volume I control CRtot(vol)1 continuous volume control range − 51 − dB Gv voltage gain −31 − +20 dB Gstep step resolution − 1 − dB Bass control Gbass bass control, maximum boost f = 46 Hz 16 18 19 dB maximum attenuation f = 46 Hz 16 18 19 dB Gstep step resolution (toggle switching) f = 46 Hz − 1.8 − dB step error between any adjoining step f = 46 Hz −− 0.5 dB Voffset DC step offset in any bass position −− 25 mV Treble control Gtreble treble control, maximum boost f = 15 kHz 11 12 13 dB maximum attenuation f = 15 kHz 11 12 13 dB maximum boost f > 15 kHz −− 15 dB Gstep step resolution (toggle switching) f = 15 kHz − 1.5 − dB step error between any adjoining step f = 15 kHz −− 0.5 dB Voffset DC step offset in any treble position −− 10 mV Volume II and balance control CRtot(vol)2 continuous attenuation of volume control range 53.5 55 56.5 dB Gstep step resolution − 12 dB attenuation set error −− 1.5 dB Mute function (see Fig.9) HARDWARE MUTE Vsw mute switch level (2 × VBE) − 1.45 − V mute active VswLOW input level −− 1.0 V Ii input current VswLOW =1V −300 −− µA mute passive: level internally defined VswHIGH saturation voltage −− VCC V td(mute) delay until mute passive −− 0.5 ms ZERO CROSSING MUTE Idch discharge current 0.3 0.6 1.2 µA Ich charge current −300 −150 −µA VswDEL delay switch level (3 × VBE) − 2.2 − V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
类似零件编号 - TEA6324 |
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类似说明 - TEA6324 |
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