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TEA6324T 数据表(PDF) 8 Page - NXP Semiconductors |
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TEA6324T 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 36 page 1997 Mar 13 8 Philips Semiconductors Preliminary specification Sound control circuit TEA6324T Pno(rms) noise output power (RMS value) only contribution of TEA6324T; power amplifier for 6 W mute position; note 1 −− 10 nW αct crosstalk between bus inputs and signal outputs note 2 − 110 − dB Source selector Zi input impedance 25 35 45 k Ω αS input isolation of one selected source to any other input f = 1 kHz − 105 − dB f = 12.5 kHz − 95 − dB Vi(rms) maximum input voltage (RMS value) THD < 0.5%; VCC = 8.5 V − 2.15 − V THD < 0.5%; VCC = 7.5 V − 1.8 − V Voffset DC offset voltage at source selector output by selection of any inputs −− 10 mV Zo output impedance − 80 120 Ω RL output load resistance 10 −− k Ω CL output load capacity 0 − 2500 pF Gv voltage gain, source selector − 0 − dB Control part (source selector disconnected; source resistance 600 Ω) Zi input impedance volume input 100 150 200 k Ω Zo output impedance − 80 120 Ω RL output load resistance 2 −− k Ω CL output load capacity 0 − 10 nF RDCL DC load resistance at output to ground 4.7 −− k Ω Vi(rms) maximum input voltage (RMS value) THD < 0.5% − 2.15 − V Vn(o) noise output voltage CCIR468-2 weighted; quasi peak Gv =20dB − 110 220 µV Gv =0dB − 33 50 µV Gv = −66 dB − 13 22 µV mute position − 10 −µV CRtot total continuous control range − 106 − dB recommended control range − 86 − dB Gstep step resolution − 1 − dB step error between any adjoining step −− 0.5 dB ∆Ga attenuator set error Gv = +20 to −50 dB −− 2dB Gv = −51 to −66 dB −− 3dB ∆Gt gain tracking error Gv = +20 to −50 dB −− 2dB α mute mute attenuation see Fig.9 100 110 − dB SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 20 V bus p p – () V o rms () --------------------------- log |
类似零件编号 - TEA6324T |
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类似说明 - TEA6324T |
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